| 摘要 |
Disclosed is a method for manufacturing a semiconductor device comprising the steps of forming an insulating interlayer on a semiconductor substrate, providing the insulating interlayer (22) with an opening formed on the semiconductor substrate (21), forming a first metal layer (25) on the semiconductor wafer thus obtained, heat-treating the first metal layer to fill up the opening with said metal, forming a second metal layer (26) on the first metal layer, and then heat-treating the second layer to planarize the metal layer. Pure Al or an aluminum alloy having no Si component is used as the metal in forming the metal layer. A semiconductor wafer obtained in accordance with this invention may have a contact hole completely filled up with metal in spite of having a high aspect ratio, may have no Si precipitate on its surface after forming a wiring pattern, and may exhibit no Al spiking. <IMAGE> |
