发明名称 Bi system copper oxide superconducting thin film and method of forming the same.
摘要 A method of forming a Bi system copper oxide superconducting thin film of Bi2Sr2Can-1CunOx (n >/= 2) including at least one pair of one CuO molecular layer and one CaO molecular layer, by a layer-by-layer process (an atomic layer piling process) using an MBE method, wherein the pair of the CuO and CaO layers is formed by alternately depositing CuO in an amount equal to a 1/m of the CuO molecular layer and CaO in an amount equal to a 1/m of the CaO molecular layer in a manner similar to that used for a superlattice structure formation, the cycle number (m) of a deposition of a pair of CuO and CaO layers being an integral number of not less than n. When the pair of CuO and CaO layers is formed, a deposition time of the CuO is X/m, where X is a depositing formation time of one CuO molecular layer, and a deposition time of the CaO is Y/m, where Y is a depositing formation time of one CuO molecular layer. <IMAGE>
申请公布号 EP0504804(A1) 申请公布日期 1992.09.23
申请号 EP19920104591 申请日期 1992.03.17
申请人 FUJITSU LIMITED 发明人 OTANI, SEIGEN
分类号 C01G29/00;C01G1/00;C30B23/02;C30B29/68;H01B12/06;H01B13/00;H01L39/12;H01L39/24 主分类号 C01G29/00
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