| 摘要 |
<p>PURPOSE:To offer the active matrix substrate which is so structured that short circuit is hardly generated between a picture element electrode and an additional capacity electrode which constitute additional capacitance. CONSTITUTION:The picture element electrode 19 is formed on a protection film 20 formed on the entire surface of a substrate 11 while covering a TFT 1 and then connected to the drain electrode 18 of the TFT 1 electrically through a contact hole 26. In this constitution, the picture element electrode 19 is not formed on a gate insulating film 15 where a source bus conductor is formed, and the gate insulating film 15 and protection film 20 are sandwiched between the additional capacitance electrode 14 and picture element electrode 19 which constitute additional capacitance. The picture element electrode and additional capacitance electrode are hardly short-circuited and the picture element electrode can be formed without being restrained by the source bus conductor. The area of the picture element electrode can be increased.</p> |
