发明名称 METHOD OF DICING SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To improve yield by conducting half-cut with two or more operations with a blade thinner than the cutting width and then conducting full-cut on the half-off surface. CONSTITUTION:A blade thinner than the cutting width is fixed to a springs 5 and it is then rotated. Thereafter a half-cut is conducted under the condition that the cutting line of a wafter 1 attached to an adhesive tape 2 is set to a cutting depth about 2/3 the thickness of the wafer 1 to form the initial half-cut surface 6A. Then, a blade 4 is located so as to provide the same width as the cutting width and the half-cut is conducted again under the same condition as explained above to form the final half-cut surface 6B. Next, the blade 4 is lowered and the full-cut is conducted at the center position of the half-cut line. Thereby, the dicing is conducted to the total surface of wafer 1, while forming the full-cut surface 7. Thereby, generation rate of chipping is lowered and the yield can be improved.</p>
申请公布号 JPH04254352(A) 申请公布日期 1992.09.09
申请号 JP19910014636 申请日期 1991.02.06
申请人 NEC CORP;NEC ENG LTD 发明人 YANAGIHARA SHINGO;FUKUI KAZUO
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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