ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY WITH TRENCH STRUCTURE,申请号US19900610598-传众专利搜索

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发明名称	ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY WITH TRENCH STRUCTURE
摘要
申请公布号	US5146426(A)	申请公布日期	1992.09.08
申请号	US19900610598	申请日期	1990.11.08
申请人	NORTH AMERICAN PHILIPS CORP.	发明人	MUKHERJEE, SATYENDRANATH;TSOU, LEN-YUAN;KUO, DI-SON
分类号	G11C17/00;H01L21/8247;H01L27/115;H01L29/788;H01L29/792	主分类号	G11C17/00
代理机构		代理人
主权项
地址

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