| 摘要 |
<p>PURPOSE:To obtain a manufacturing method of a nonlinearly voltage-dependent resistor which can improve the humidity resistance and the rate of change of V1mA and reduce irregularity of characteristics. CONSTITUTION:In order that a voltage nonlinear resistor may contain bismuth compound of 0.5-1.5mol% converted into Bi2O3 and boron compound of 0.001-0.05mol% converted into Ba2O3, bismuth compound and boron compound are added to mixture whose main component is zinc oxide, and said mixture is molded and baked. In the baking process, the temperature is raised so as to maintain the relation 830/A<=v<=3660/A in a temperature range higher than or equal to 800 deg.C, where v( deg.C/hr) is the temperature rise speed and A(cm<3>) is the volume of an object to be baked. When the temperature is raised, gas having an oxygen partial pressure higher than or equal to 150mmHg is introduced into a baking furnace, and the atmosphere in the baking furnace is stirred.</p> |
