| 摘要 |
PURPOSE:To contrive accomplished of high efficiency for the titled semiconductor device by a method wherein an I<2>L gate is surrounded using at least one each of dielectric and, at the same time, a second conductive type high density impurity region is formed below said dielectric, thereby enabling to inject an injector current to each gate of the I<2>L, which coexists with a linear circuit, respectively. CONSTITUTION:Following a selective oxidization method, an oxide film of 1- 1.5mum in thickness is formed on an I<2>L gate isolation region. Then, P type impurities are selectively diffused and the base region of an NPN transistor, which performs the function as an emitter region for a injector region 26 and a PNP transistor, is formed. At the same time, a P type base region is formed on the region where a linear circuit will be formed, N type impurities are selectively diffused, and collector regions 281 and 282 for the NPN transistor are formed in the base region 27. Subsequently, after an Al film has been vapor-deposited on the whole surface, an injector electrode 31, a base electrode 32 and collector electrodes 331 and 332 are formed by performing a patterning and, at the same time, each electrode for the linear circuit is also formed. |
