| 摘要 |
PURPOSE:To provide a semiconductor light emitting element having a high light emitting efficiency by forming an excellent epitaxial layer lattice-matched to a substrate crystal. CONSTITUTION:In a semiconductor light emitting element formed with a plurality of III-V compound semiconductor mixed crystals as an epitaxial layer 5 on a substrate crystal 1, a composition of the layer 5 is so formed with AlxGa1-x-yInyN (0<=x<1, 0<y<1) that the crystal 1 is ZnO, part of the Ga of the semiconductor GaN is substituted for In or In and Al (active layer 2 and clad layers 3, 4) in the composition of the layer 5. The excellent epitaxial layer of mixed crystal GaInN or mixed crystal AlGaInN is obtained, thereby constituting a semiconductor light emitting element having an excellent light emitting efficiency. |
