发明名称 Photoemitter
摘要 A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.
申请公布号 US5138191(A) 申请公布日期 1992.08.11
申请号 US19900546753 申请日期 1990.07.02
申请人 HAMAMATSU PHOTONICS K. K. 发明人 MIZUSHIMA, YOSHIHIKO;HIROHATA, TORU;IHARA, TSUNEO;NIIGAKI, MINORU;SUGIMOTO, KENICHI;OBA, KOICHIRO;SUZUKI, TOSHIHIRO;SUZUKI, TOMOKO
分类号 G01J1/02;H01J1/30;H01J1/308;H01J1/34;H01J29/38;H01J29/45;H04N5/33 主分类号 G01J1/02
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