发明名称 |
Self-aligned edge control in silicon on insulator |
摘要 |
An improved process and structure for channel stop in silicon on insulator using LOCOS isolation are disclosed. Advantages include decreased ion dose requirements; reduced processing time; smaller DELTA W characteristics, thus, small transistor size and more precise process control over the edge of a MOSFET. The process also makes possible a wide range of transistor design capabilities and improved transistor operating parameters.
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申请公布号 |
US5863823(A) |
申请公布日期 |
1999.01.26 |
申请号 |
US19950408750 |
申请日期 |
1995.03.21 |
申请人 |
PEREGRINE SEMICONDUCTOR CORPORATION |
发明人 |
BURGENER, MARK L. |
分类号 |
H01L21/316;H01L21/02;H01L21/20;H01L21/76;H01L21/762;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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