| 摘要 |
PURPOSE:To realize a photovoltaic device whose initial photoelectric conversion efficiency is high, whose optical deterioration is low and whose stability is high for a long time. CONSTITUTION:At a photovoltaic device formed by stacking a plurality of photovoltaic cells, the optical band gap of an i-type semiconductor layer 107 at a first cell 111 on the lightincident side is made smaller than the optical band gap of an i-type semiconductor layer 104 at a second cell 112. Thereby, the i-type semiconductor layer 107 at the first cell 111 can be made ultrathin. As a result, an internal electric field which drifts charged carriers generated at the inside by irradiation light 130 becomes stronger, an optical deterioration action by residual charged carriers becomes small, and it is possible to form the photovoltaic device whose optical deterioration is low and whose drop in an initial photoelectric conversion efficiency is small. |
