| 摘要 |
PURPOSE:To eliminate dispersion in the in-plane distribution of resistivity by conducting first stage annealing with arsenic vapor pressure applied over a predetermined temperature range, second annealing over a predetermined temperature range under a non-oxide atmosphere, and third annealing with arsenic vapor pressure applied at a predetermined temperature by encapsulation of a wafer and arsenic. CONSTITUTION:A wafer of GaAs single crystal is vacuum encapsulated with arsenic into a heat-resistant container and subjected to first stage annealing with arsenic vapor pressure applied over a range of 1050-1150 deg.C. Next, a wafer is cooled down to room temperature at a decreasing rate of 1-25 deg.C/min and taken out is etched and subjected to second stage annealing over a temperature range of 910-1050 deg.C under a non-oxidative atmosphere. Next, it is cooled down to room temperature at a decreasing rate of 1-25 deg.C/min and subjected to third stage annealing with arsenic vapor pressure applied at a temperature range of 520-730 deg.C. Thereafter, it is cooled down to room temperature at a cooling rate of 15-30 deg.C/min until 400 deg.C.
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