| 摘要 |
<p>PURPOSE:To enable a resistor having multiple resistant layers in different sheet resistances to be formed easily by a method wherein a reducing film and an oxidative film are formed respectively on the surfaces of the first and second parts of a resistor forming film comprising a metallic oxide film to be heat- treated later. CONSTITUTION:A silicon oxide film 10 is formed on one main surface of a semiconductor substrate 1 and after etching away a silicon nitride film 9 and the silicon oxide film 10 on a barrier electrode 8, an outer electrode 13 comprising a Ti layer 11 and an Al layer 12 is formed. Successively, after etching away the element peripheral side of the silicon nitride film 9, this semiconductor substrate 1 is heat-treated. Through these procedures, the first part 7a of a Ti oxide thin layer 7 in contact with the silicon nitride film 9 is to be reduced by the silicon nitride film 9 for lowering the oxidation degree and the seat resistance as a result on the other hand, the oxidation degree of the second part 7b of the Ti oxide thin film 7 in contact with the first part 7a and covered with the silicon oxide film 10 is to be heightened for stiffening the sheet resistance.</p> |
