| 摘要 |
PURPOSE: To provide a trench without any groove, spike, or another undesired plane shape on the floor by etching the trench by using the forward spattering of a hard mask. CONSTITUTION: This circuit is composed of silicon oxide, and the silicon is exposed only in a scheduled trench place. Thus, a silicon substrate on which a hard mask in which a limited pattern is decided is provided is prepared. Then, the oxide of the silicon is always deposited on the side wall of the trench during etching, and almost all the oxygen electrons of the silicon on the side wall at the side wall are allowed to come from the hard mask. The etching of the trench is operated by the plasma source of a silicon etching agent ion at the scheduled trench place of the silicon substrate under this condition. |
