发明名称 LEVEL SHIFT CIRCUIT
摘要 The level converter for converting a TTL level of input signal to a CMOS level comprises a NOR gate circuit (1), including a first voltage pull-up PMOS transistor (PI2), to which the TTL signal is inputted, an inverter (INV) connected to the NOR gate circuit, and a speed control circuit (2). The NOR gate circuit has a PMOS (PI1) and an NMOS (NI1) controlled by a control signal (CS), as well as a CMOS transistor (PI2, NI2) fed by the TTL signal. The speed control circuit includes a second voltage pull-up PMOS transistor (PI4). The two transistors (PI2,PI4) are connected in parallel between VCC and the input to the inverter. A fast conversion speed is obtained by turning on both PMOS (PI2,PI4) when the TTL signal goes from the high level to the low level.
申请公布号 KR920006251(B1) 申请公布日期 1992.08.01
申请号 KR19890015443 申请日期 1989.10.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, YONG - BO
分类号 H03K19/017;H03K19/0185;(IPC1-7):H03K19/08 主分类号 H03K19/017
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