| 摘要 |
<p>A semiconductor device capable of realizing a neuro-computer chip of high integration degree and low power consumption. The device consumes a very small amount of electric power and the combinations of synapes can be realized, using a small number of elements. A first MOS type transistor includes a first gate electrode floating in potential and provided in a region isolating a source region from a drain region via a first insulation film, and plural second gate electrodes capacitively coupled to the first gate electrode via a second insulation film, one of which is in connection with a source electrode. The gate or drain electrode of the MOS type transistor is in connection with a first wiring for transferring signals of high or low level in potential.</p> |
