PROCESS FOR MANUFACTURING EEPROM MEMORY CELLS HAVING A SINGLE LEVEL OF POLYSILICON AND THIN OXIDE BY USING DIFFERENTIAL OXIDATION,申请号US19900574677-传众专利搜索

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发明名称	PROCESS FOR MANUFACTURING EEPROM MEMORY CELLS HAVING A SINGLE LEVEL OF POLYSILICON AND THIN OXIDE BY USING DIFFERENTIAL OXIDATION
摘要
申请公布号	US5132239(A)	申请公布日期	1992.07.21
申请号	US19900574677	申请日期	1990.08.30
申请人	SGS-THOMSON MICROELECTRONICS S.R.L.	发明人	GHEZZI, PAOLO;RIVA, CARLO;VALENTINI, GRAZIA
分类号	H01L21/28;H01L21/316;H01L21/8247;H01L27/115;H01L29/788;H01L29/792	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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