METHOD OF INSPECTING SEMICONDUCTOR DEVICE, APPARATUS FOR INSPECTING THE SAME, AND METHOD OF MANUFACTURING THE SAME.

摘要

In the inspection of a semiconductor device having internal elements including MISFETs, especially complementary MISFETs, whether the semiconductor device is good or defective is judged by static currents flowing through the device in a state that the internal elements are fixed. A stuck-at fault, a fault sensed using conventional fault-simulation of MISFETs, etc., and further a fault relative to the reliability in a long term can be sensed jointly by using a group of patterns which controls the states of the nodes of the internal elements or ON-OFF states of the MISFETs constituting the internal elements as a group of test patterns for the inspection. In the inspection according to the static currents, because of no necessity of considering the observability of faults at an output terminal, the number of the test patterns used for the inspection is small, and the creation thereof is easy too.