| 摘要 |
PURPOSE:To stably easily form an uneven part on the surface of a conductive film which becomes a charge storage electrode by forming many recesses and protrusions on the surface of a deposited film which become the electrode, forming the conductive film on the deposited film formed with the recesses and the protrusions, and removing the deposited film. CONSTITUTION:Many small recesses and protrusions are formed on the surface of a baron silicate glass(BPSG) film 7 which become a film to be deposited. Then, an n<+> type second polycrystalline silicon film 8a to become a conductive film is deposited on the film 7 and a first polycrystalline silicon film 6a, and many recesses and protrusions are formed on the surface. Thereafter, the film 8a on the film 7 and the film 6a on a silicon nitride film 20 and the film 8a are removed, the film 7 is removed by etching, thereby forming a storage electrode 9a. Thus, a conductive film having many recesses and protrusions on the surface and easily increasing in its surface area can be formed. |
