| 摘要 |
PURPOSE:To suppress the irregularity between picture elements to an extremely low point by a method wherein the positioning and diffusion of the source region and the gate region of each picture element located on a gate storage type electrostatic induction transistor image sensor are performed simultaneously. CONSTITUTION:A buried layer 2, an epitaxially grown layer 3, and a field oxide film 7 are formed on a substrate 1. An aperture is provided on a shielding gate part 4, a control gate part 6, and a source part 5 simultaneously, and a polysilicon layer 8 whereon As, P and the like are doped, and a PSG film 9 are formed on a region 5. A diffusion of boron or an ion implantation is performed on the whole surface, and a p<+> diffusion layers 4 and 6 are formed by performing a heat treatment. At the same time, an As or P diffusion is performed from the polysilicon layer 8, and a source n<+> region 5 is formed. A PSG film 9 is formed again, an aperture is provided on the region 6, and a transparent electrode consisting of an Si3N4 film 10, an SnO2 film, an ITO film and the like is formed. |
