发明名称 INFRARED HEATING APPARATUS FOR PHOTO-CHEMICAL DEPOSITION APPARATUS
摘要 The IR heater in photo-CVD apparatus for depositing membranes such as SiO2 or Si3N4 on LSI semiconductor, heats circuit boards in manufacturing semiconductors. The IR heater comprises a support plate (100) for adjusting distance between the circuit board in reactor and tungsten halogen lamp (101), clamped by an adjustment screw (111a) and positioned between right and left support frames (111); IR reflecting mirror (104) fixed on the plate (100); a lamp socket (102), for supporting the lamp (101), fixed at the both sides of the mirror (104). The mirror (104) has an inner compressed air injecting nozzle (105) for cooling the lamp (101) and a tube (110) for circulating cooling water in horizontal direction.
申请公布号 KR920004964(B1) 申请公布日期 1992.06.22
申请号 KR19880017970 申请日期 1988.12.30
申请人 KOREA TELECOMMUNICATION CORP.;KOREA ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM, YUN - TAE;CHON, CHI - HUN;KIM, BO - U;KIM, SANG - HO;LEE, YONG - SU
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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