Method of making the metallisation on a semiconductor device.

摘要

The invention relates to making electrodes on metal/semiconductor junction diodes or transistors, after ion implantation in the semiconductor material. Reheating the implanted region (3) in the Si or GaAs slice (1) requires an encapsulation layer (6) to protect the slice (1). According to the invention, this layer is made from a refractory metal, such as W, Ti, etc which does not need to be withdrawn in order to be able to deposit an electrode (7). Application to making transistors and integrated circuits, with implantation. <IMAGE>