A thin film of superconductor and a process for preparing the same.

摘要

A thin film of oxide superconductor deposited on a single crustal substrate of silicon wefer. A buffer layer of (100) or (110) oriented Ln2O3, in which Ln stands for Y or lanthanide elements is interposed between the thin film of oxide superconductor and the silicon wafer. A surface of silicon wafer is preferably cleaned satisfactorily by heat-treatment in vacuum before the buffer layer is deposited. An under-layer of metal oxide ; ZrO2, YSZ or metal Y, Er is preferably interposed between the Ln2O3 buffer layer and the silicon wafer.