| 摘要 |
PURPOSE:To simplify a manufacturing process, to remove a defective pattern and to form a stable gate electrode by forming a low-resistance gate electrode having a T shape by using the resist of a single layer, which can be silylated. CONSTITUTION:The upper section of a semiconductor substrate 1a, to which an ohmic electrode 2 is shaped, is coated with a resist c6a, a photosensitive section of which can be silylated, a desired region is exposed, and a silylated layer 6b is formed. The resist of a non-exposure section (a region not silylated) is etched up to desired thickness and a pattern is formed, and one part of a thinned region is bored. A recess groove 1c is shaped, a gate metal is evaporated on the whole surface, and a gate electrode 5 is formed through lift-off. Accordingly, the low-resistance gate electrode 5 having a T shape is formed, thus simplifying a manufacturing process while preventing a defective pattern due to the mixing of the resist, then forming the stable gate electrode 5. |
