| 摘要 |
PURPOSE:To prevent disconnection at the shoulder of a groove and to provide a semiconductor light emitting element having high reliability by etching the shoulder of a first groove from above and side in a second etching to smoothen it. CONSTITUTION:A first mask is removed, and an insulating film SiO2 film 67 is formed on this sample. Then, a part in contact with a light emitting unit of the film 67 is removed, one electrode Ti/Pt/Au electrode 69 is formed on the part of a P<+> type InGaAsP cap layer 55 exposed as above, other electrode 71 is formed on the rear surface of a substrate 41 to obtain a semiconductor laser. In a semiconductor laser manufactured in this manner, even if the electrode 69 is extended externally from the light emitting unit through a groove 65, since the shoulder of the groove 65 is smooth, deterioration of a step coverage of this part does not occur. |
