| 摘要 |
PURPOSE:To attain the high precision of the relative aligning of a reticle and a wafer by arranging linear marks composed of plural light transmitting parts and shielding parts in parallel with an aligning direction in a pitch that reflected light from the top and bottom surfaces of an alignment pattern on the surface of an object is separated, in fine patterns. CONSTITUTION:The fine patterns P have such constitution that the linear marks composed of plural light transmitting parts and shielding parts are arranged at a constant pitch, in parallel with a position detecting direction (X-direction). At this time, the pitch is set so that optical information based on the reflected light from the top and bottom surfaces of a three-dimensional structure alignment patterns Wa on the wafer, can be separated. In other words, the pitch is set in a degree that the brightness and darkness of the alignment pattern on a wafer surface can be detected with excellent precision via the fine patterns P when the wafer is changed in the optical axial direction of a projecting optical system 12. Thus, the relative positioning of the reticle and the wafer is carried out with the high precision. |
