HALBLEITERSPEICHERANORDNUNG.

摘要

In a semiconductor memory device including word lines (WL) and bit lines (BL), a regular pattern circuit area comprising elements regularly arranged in line with the word lines and/or the bit lines is divided into a plurality of blocks (1-1, 1-2). Provided between the divided blocks are irregular or peripheral circuit areas (2). Provided outside of the divided blocks are pads (P1 to P16).