TECHNIQUES USEFUL IN FABRICATING SEMICONDUCTOR DEVICES HAVING SUBMICRON FEATURES

摘要

TECHNIQUES USEFUL IN FABRICATING SEMICONDUCTOR DEVICES HAVING SUBMICRON FEATURES Submicron resolution in the fabrication of transistors is obtained by using sidewall techniques. The techniques described remove the sidewalls after an oxidation step and the openings so formed by the removal are used as a mask for subsequent substrate modification by either diffusion or ion implantation.