| 摘要 |
<p>In a lateral MOS FET, a back gate region a part of whose surface is a channel region is formed to surround the drain region, while being in contact with a part of the periphery of the drain region. With this configuration, if a high voltage electrostatic surge invades the drain electrode, a surge current will disperse from the drain region toward the surrounding back gate region. As a result, a rise in the electric potential at the drain region is suppressed smaller. Thus the electric potential hardly exceed the dielectric strength of the gate insulating film, thereby suppressing a breakdown of the gate insulating film and an electrostatic breakdown of the device. <IMAGE> <IMAGE></p> |
