| 摘要 |
PURPOSE:To form an emitter layer in narrow width by a method wherein the first insulating film and a one conductivity type polycrystal semiconductor emitter layer are patterned; the second insulating film covering the sides of the one conductivity type polycrystal semiconductor emitter layer is formed; and then a base leading-out layer in contact with an opposite conductivity type semiconductor base layer is formed. CONSTITUTION:An n type Si collector layer 12 is epitaxially grown on an n type Si semiconductor substrate 11 and then an interelement insulation separating film 3 is formed. Next, a p type Si base layer 14, an n type Si emitter layer 15 and an insulating film 16 are formed on the whole surface and then the first insulating film and a one conductivity type polycrystal semiconductor emitter layer are patterned in specific emitter shape. Next, an insulating film 17 covering the sides of the first insulating film and the one conductivity type polycrystal semiconductor emitter layer taking a mesa shape is formed. Finally, a polycrystal Si base leading-out layer 18 in contact with an opposite conductivity type semiconductor base layer is formed. |
