| 摘要 |
<p>PURPOSE:To avoid storage of charge and to prevent a malfunction such as a point defect, etc., by always holding a thin film transistor TFT in a conductive state, and dry etching it. CONSTITUTION:After a switching element and a pixel electrically connected to the element are formed, it is dry-etched in a state that the element is held in a conductive state. The source and the drain of a TFT 9 are separated at the time of channel etching, and even if the TFT 9 is turned OFF, amorphous silicon films 5, 4 of a channel etching part 8 are irradiated with a light containing a wavelength range of a forbidden band width from a light source 10, thereby sufficiently reducing its resistance value. Thus, negative charge of a pixel electrode 7 connected to a source electrode is not stored therein, but fed to the drain side and hence the periphery of a glass board 1 through the films 4, 5. As a result, the insulation breakdown of the film 3, and hence a point defect can be eliminated.</p> |
