| 摘要 |
PURPOSE:To form an insulating film having a large capacity value by conducting a step of forming a tantalum oxide film by thermal chemical reaction using organic tantalum material gas, etc., and then a step of forming a tantalum oxide film by a plasma chemical reaction using halogen tantalum material gas, etc., in the same apparatus. CONSTITUTION:A wafer 12 is conveyed to a reaction chamber 17, organic tantalum material [Ta(OC2H5)5] gas in a vaporizing chamber 7 heated by a heater 8 is introduced into the chamber 17, and oxygen gas from a supply source 1 is introduced into the chamber 17 by opening a valve 25. Then, a chemical reaction due to heat occurs, and a tantalum oxide film is formed on the wafer 12. Then, the wafer 12 is fed into a reaction chamber 18, halogen tantalum material (TaCl5) gas in a heated vaporizing chamber 9 is introduced into the chamber 18, and nitrous oxide gas from a supply source 2 is introduced. A high frequency power source 16 is turned ON to cause a plasma chemical reaction, a tantalum oxide film is formed on the wafer 12, and a capacitive insulating film having a large capacity value can be formed. |
