Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells

摘要

Apparatuses and methods of pulse shaping a pulse signal for programming and erasing a Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory cell are described. In one method a pulse shape of a pulse signal is controlled to include four or more phases for programming or erasing a SONOS memory cell. A write cycle is performed to program or erase the SONOS memory with the pulse signal with the four or more phases.

主权项

1. A method comprising:
controlling a pulse shape of a pulse signal to include four or more phases for both programming and erasing a Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory cell during a write cycle, wherein the controlling the pulse shape further includes
controlling a first ramp rate of the pulse signal, andcontrolling a second ramp rate, which is different from the first ramp rate, of the pulse signal; and performing the write cycle to program or erase the SONOS memory cell each with the pulse signal with the four or more phases.