| 摘要 |
PURPOSE:To improve the mutual adhesion between two layers of resist films so as to enable the formation of a minute pattern by bringing oxygen plasma into contact with the first positive film on a substrate, and then forming a second positive resist mask on this first positive resist mask, and compounding them into a simple resist mask. CONSTITUTION:In the case that any projecting grain is formed at the etched film 2 made on a substrate 1, a first positive resist film 2 is applied thereon to bury the projection 10, and a resist mask 31, which has a first aperture 4, is made on the aperture formation area of the etched film 2, and oxygen plasma is brought into contact with the surface of the first positive resist mask 31 so as to make the surface irregular. Next, a second positive resist film 5 is applied on the first positive resist mask 31, which includes the inside of the first aperture 4, and a second positive resist mask 51, which has a second aperture 6 above the first aperture, is made, and the resist masks 31 and 51 are compounded into a united resist mask. |
