发明名称 |
Manufacturing method for semiconductor memories |
摘要 |
In a manufacturing method for a dynamic random access memory with box-structured memory cells is disclosed, a polysilicon side wall is again formed inside the polysilicon side wall forming the outer wall. After that, with the side wall formed on this inner wall used as mask, an opening for forming a cavity is made in the center of the storage node in a self-aligned manner.
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申请公布号 |
US5102820(A) |
申请公布日期 |
1992.04.07 |
申请号 |
US19910722675 |
申请日期 |
1991.06.28 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
CHIBA, ATSUSHI |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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