| 摘要 |
<p>PURPOSE:To emit a light perpendicularly to a substrate without 45 deg. mirror by providing a quantum well layer as a light absorption layer and active layer in a p-n-p-n structure, guide layers provided on and underneath the quantum, and multilayer film reflecting mirrors provided on and underneath the guide layer, and increasing the thickness of an intermediate layer made of the well layer and the guide layer to integer number times as large as an oscillation wavelength in a medium. CONSTITUTION:An n-type semiconductor multilayer film 2, a p-type GaAs layer 3, a non-doped GaAs layer 4, a nondoped active layer 5 to become a quantum well layer, a nondoped GaAs layer 6, an n-type GaAs layer 7 and a p-type semiconductor layer film 8 are formed on an n-type GaAs substrate 1. In the film 2, 10 pairs of n-type GaAs layers 9 and n-type AlAs layers 10 are alternately laminated to be formed. In the film 8, 30 pairs of p-type GaAs layers 11 and p-type AlAs layers 12 are alternately laminated similarly to be formed. The thickness of the intermediate layer is set to integer number of times of a wavelength in a medium of a laser oscillation. A bias voltage is applied by upper and lower n-type electrode 13 and p-type electrode 14, and optical input/output are conducted through an n-type GaAs substrate. Thus, its photodetecting efficiency can be enhanced.</p> |
