| 摘要 |
PURPOSE:To obtain diamond having extremely high purity by previously forming diamond on the inner wall of a reaction chamber by plasma CVD method and then sputtering the formed diamond to synthesize diamond on the surface of matrix. CONSTITUTION:In synthesizing diamond on the surface of a matrix 7 set in a reaction chamber 3 by plasma CVD method, the following method is adopted. Namely, diamond is previously formed on a wall 3a of the reaction chamber 3 (by a microwave oscillator 1, an oxygen gas 9 and a carbon-containing compound (methane gas) 11), then hydrogen plasma or oxygen plasma is generated (e.g. oxygen gas 9 is fed) in the formed state of the diamond in the reaction chamber 3 and the formed diamond is sputtered to synthesize diamond on the surface of the matrix 7. In a process of second stage, diamond can be synthesized at a high rate while avoiding increase in impurity by feeding only a small amount of the carbon-containing compound 11 to the reaction chamber 3. |
