| 摘要 |
<p>There is a method for depositing a thin film on a substrate (20) placed in a chamber (10) by a sputtering process in which a target (1) set on a cathode assembly (3) is sputtered under a predetermined ambient condition in the chamber (10). The method includes steps of: setting the target (1), which is formed of a backing plate (1b) and a target plate (1a) directly connected to the backing plate (1b), on the cathode assembly (3), the backing plate (1b) having a heat conductivity greater than that of the target plate (1a); heating the target (1) at a predetermined temperature at which residual gases absorbed on the target plate (1a) can be removed therefrom; and activating the cathode assembly (3) so that the target plate (1a) is sputtered. The target (1) can be also formed of a backing plate (1b), a spacer (23) directly connected to the backing plate (1b), and a target plate (1a) directly connected to the spacer (23), the spacer (23) having a melting point greater than that of the target plate (1a). <IMAGE></p> |
