VERFAHREN ZUM ERZEUGEN TIEFER GRAEBEN IN EINEM EINKRISTALLINEN SILIZIUMSUBSTRAT,申请号DD19900340739-传众专利搜索

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发明名称	VERFAHREN ZUM ERZEUGEN TIEFER GRAEBEN IN EINEM EINKRISTALLINEN SILIZIUMSUBSTRAT
摘要
申请公布号	DD298975(A5)	申请公布日期	1992.03.19
申请号	DD19900340739	申请日期	1990.05.17
申请人	VEB FORSCHUNGSZENTRUM MIKROELEKTRONIK DRESDEN,DE	发明人	ROTHE,OLAF,DE;HANDKE,RAINER,DE
分类号	H01L21/306;(IPC1-7):H01L21/306	主分类号	H01L21/306
代理机构		代理人
主权项
地址

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