| 摘要 |
PURPOSE:To form an amorphous semiconductor thin film having good quality on a substrate by removing previously the adsorbed gas in a reaction chamber by discharge of gaseous NH3 when said film is formed on the substrate surface by plasma CVD method while introducing raw material gas into the reaction chamber in which the substrate is arranged. CONSTITUTION:The substrate 7 is mounted on an electrode 4 of the substrate side in a chamber 1, and an electrode 5 of raw material introducing side having a gas jetting hole 3 is arranged at the position opposing thereof. Next, the gaseous NH3 is allowed to flow into the chamber 1, 13.56MHz high frequency voltage is impressed between both electrodes 4, 5 by an electric source 6, and glow discharging is performed. Gases such as O2, H2O, CO2 adsorbed to the inner wall of the chamber, respective electrodes 4, 5, the substrate 7, etc. are removed as NOx, hydrocarbon from inside of the chamber 1. Thereafter, SiH4, Si2H6, PH3, B2H6, NH3, etc. as raw material gas is introduced from the hole 3 of the electrode 5 to glow discharge it, and the amorphous semiconductor thin film of high purity amorphous, Si, etc. is formed on the surface of the substrate 7. |
