| 摘要 |
PURPOSE:To prevent the deterioration of the initial characteristics of a compound semiconductor device due to the cleaning step, for example, of a GaAs Schottky gate FET by performing the cleaning after etching by shielding the light in the step of forming metallic electrodes on a thin active layer. CONSTITUTION:In a step of forming a Schottky gate electrode 3 on an active layer 2 having a thickness less than 0.5mum formed, for example, on a GaAs substrate 1, the electrode 3 is etched and formed, and then the etchant is cleaned with water on the surface of the layer 2. This cleaning step is performed in dark state by shielding the external incident light to reduce the number of holes produced in an N type GaAs. Thus, it can prevent the formation of oxidized region 4 at the periphery of the electrode 3, and can prevent the decrease in the initial characteristics, e.g., power gain, noise index of the FET to be generated in the cleaning step. |
