发明名称 METHOD OF MANUFACTURING ITO SPUTTERING TARGET
摘要 In manufacturing a high-density ITO sputtering target by press-molding a powder mixture consisting essentially of indium oxide and tin oxide is compacted and the resulting compact is sintered. The sintering is performed in an atmosphere of oxygen under a pressure of at least one atmosphere (gauge pressure). The present invention offers very advantageous effects from the industrial viewpoint in that it permits mass production of high-performance, high-density ITO targets at low cost using mass productivity.
申请公布号 US5094787(A) 申请公布日期 1992.03.10
申请号 US19900616559 申请日期 1990.11.21
申请人 NIPPON MINING CO., LTD. 发明人 NAKAJIMA, KOICHI;SATO, NORIAKI
分类号 C04B35/00;C04B35/01;C04B35/645;C23C14/34 主分类号 C04B35/00
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