发明名称 |
METHOD OF MANUFACTURING ITO SPUTTERING TARGET |
摘要 |
In manufacturing a high-density ITO sputtering target by press-molding a powder mixture consisting essentially of indium oxide and tin oxide is compacted and the resulting compact is sintered. The sintering is performed in an atmosphere of oxygen under a pressure of at least one atmosphere (gauge pressure). The present invention offers very advantageous effects from the industrial viewpoint in that it permits mass production of high-performance, high-density ITO targets at low cost using mass productivity.
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申请公布号 |
US5094787(A) |
申请公布日期 |
1992.03.10 |
申请号 |
US19900616559 |
申请日期 |
1990.11.21 |
申请人 |
NIPPON MINING CO., LTD. |
发明人 |
NAKAJIMA, KOICHI;SATO, NORIAKI |
分类号 |
C04B35/00;C04B35/01;C04B35/645;C23C14/34 |
主分类号 |
C04B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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