| 摘要 |
PURPOSE:To form a uniform thin AlN film excellent in flatness characteristic on a substrate by using a specific organic gas as a gaseous raw material and irradiating a substrate with light of specific wavelength at the time of forming a thin AlN film on a substrate by means of organometallic vapor phase epitaxial growth. CONSTITUTION:A substrate 3 composed of a material having a lattice constant close to that of AlN, such as AlAs, Si, and SiC, is attached to a holder 4 in a vacuum vessel 1, and the inside of the vessel 1 is evacuated by means of a vacuum pump 2. The substrate 3 is heated up to 500-750 deg.C by means of a heater 5, and the substrate 3 is irradiated with light 10a having a wavelength shorter than the wavelength equivalent to the width of forbidden band of the thin AlN film by means of an Xe lamp 9, etc., via a window 14. Simultaneously, as gaseous raw material, alkyl Al gas 6a, such as trimethyl Al, and alkylamine gas 6b, such as dimethylamine, are supplied together with H2 gas 6c into the vacuum vessel 1 through respective nozzles 8a-8c. By this method, the AlN layer in a thin film state having uniform composition and excellent in flatness characteristic of surface can stably be formed on the substrate 3. |
