| 摘要 |
PURPOSE:To realize a high speed turning-OFF and to increase a frequency even when capacity of a semiconductor device is increased by providing a reverse conductivity type high impurity concentration region and the same conductivity type high impurity concentration region in a base region, and providing a switching element to short-circuit the base region simultaneously upon starting of turning-OFF operation. CONSTITUTION:Holes injected from an anode emitter are run in an N-type base so as to circulate along an NB<+> type region, and are mainly directed toward a P-type base through a PC<+> type region. On the other hand, electrons injected from a cathode emitter are run in the N-type base to flow to an anode side through a low resistance NB<+> type region. When a light signal pulse is emitted simultaneously to two photoresist transistors Tr1, Tr2, a normal turning- OFF operation is started by the Tr1, and storage carrier of the PB type region is output from a gate G. Simultaneously, the Tr2 is conducted to short-circuit electrodes C to B, holes of minority carrier in the N-type base are output from the PC<+> type region and recombined with electrons output from the NB<+> type region on the metal electrode C. Accordingly, the minority carrier in the n-type base is vanished. |
