| 摘要 |
<p>A high-intensity, inexpensive X-ray lithography for the production of integrated circuits. Foil stacks (24) are bombarded with a high-energy electron beam (22) of 25 to 250 MeV to produce a flux (26) of soft X-rays of 500 eV to 3 keV. Methods of increasing the total X-ray power and making the cross section of the X-ray beam uniform are described. Methods of obtaining the desired X-ray beam field size, optimum frequency spectrum and eliminating the neutron flux are all described. A method of obtaining a plurality of station operation is also described which makes the process more efficient and economical. The satisfying of these issues makes transition radiation an excellent moderate-prices X-ray source for lithography.</p> |
