| 摘要 |
PURPOSE:To form a resist pattern having a high aspect ratio, and to obtain a developing method with which a high developing speed can be realized by a method wherein, in a developing treatment to be conducted after a prescribed pattern has been transferred onto a resist film formed on a conductive substrate by exposure, the potential difference of a DC or AC current is provided between a substrate and the electrolytic developing solution in which the resist film will be dipped. CONSTITUTION:After a first conductive substrate 8 and a second conductive substrate 4, on which an exposed resist film 6 is formed, have been dipped in an electrolytic developing solution 5, a DC or AC potential difference is provided between the first conductive substrate 8 and the second conductive substrate 4. For example, pertaining to a resist, a phenol novolak system resin film of positive type photoresist is used as the base resin, a quinondiazide system material is used as a photosensitive radical, and an aqueous solution, composed of trimethylammonium hydrooxide, having an alkaline normality of 2.38%, is used as a developing solution. Also, the potential difference to be added between the conductive substrate 8 and a platinum electrode 4 from an external power source 1 has the effective voltage of 1 volt or thereabout in DC or AC, and a shortwave of 1kHz is used when AC is used. |
