Terminal contact for integrated circuit semiconductor systems - comprises barrier-, undoped gold and gold rich eutectic gold-tin doped-layers on conducting path

摘要

Contact (I) with barrier layer (4) and contg. gold and tin, has an undoped gold layer (7-1) in the region neighbouring (4) and a gold-rich eutectic gold-tin-doped layer (7-3) contg. 80 wt. % gold and 20 wt. % tin in a region not adjacent to (4). Prepn.of (I) comprises applying gold layer to (4) and applying tin layer (7) and doping at 330-420 deg. C for up to 10 min. pref. in a non-oxidising atmos. Pref. intermediate layer (7-2) in the form of a gold-tin phase is between (7-1) and (7-3).