| 摘要 |
PURPOSE:To enable rapid heat treatment with a small amount of energy, by heating and cooling only a cavity-side insulating layer, which constructs a heating.cooling- function layer, formed in the inside surface of a metal mold. CONSTITUTION:A plurality of p-type semiconductor layer 10 and a plurality of n- type semiconductor layers 11 are arranged alternatively on the cavity-side surfaces of support dies 3a, 3b, which a hollow plastic vessel will adhere closely to. These semiconductor layers are connected together with metallic connection layers 12, 13. In addition, heat-transferring dielectric layers 14,15 are formed. Thus, a heating. cooling-function layer 2 is constructed. A direct current is supplied through the connection layer 13 to the p-type semiconductor layer 10, and also through the connection layer 12 to the n-type semiconductor layer 11, so that a heat is generated at contact planes between the connection layer 12 and the semiconductor layers 10, 11, and absorbed at a contact planes between the connection layer 13 and the semiconductor layers 10, 11. Consequently, the cavity-side insulating layer 14 is heated at a temperature higher than those of the support dies 3a, 3b by the heat generation. |
