| 摘要 |
<p>PURPOSE:To obtain a ceramic package for semiconductor having high sealability and low thermal resistance by composing it of a through hole conductor formed of a metal wire having a melting point equal to or higher than the baking temperature of ceramics, and a board in which input/output pins are connected to the conductor. CONSTITUTION:Multilayer interconnection conductors 8 are interposed in a ceramic 2, and a metal wire through hole conductors 10 to be conducted therewith is interposed therein. Input/output pins 3 are directly brazed to the conductor 10 by a brazing layer 11 without Ni plating. As the baking temperature is 1700 deg. or higher, a metal wire made of W, Mo higher in melting point is applied to a board containing AlN as a main ingredient. Particularly, the wire of W substantially coincident with the AlN having 4.5X10<-6>/ deg.C of thermal expansion coefficient is selected. Thus, reliability for sintering the board and thermal stress in the case of a cold cycle is obtained. Further, if heat dissipation from a printed board is considered, heat can be dissipated to the board through the high thermal conductivity input/output pins, and it is possible to make the thermal resistance of a package lower by taking the material of the input/ output pins into account.</p> |
