FORMATION METHOD OF OXIDE FILM BY CHEMICAL VAPOR DEPOSITION

摘要

The oxide film forming method consists of (a) injecting N20 gas and SiH2Cl2 gas simultaneously after loading the wafer to inside of tube and at this time laminating on the silicon substrate(1) by chemical reaction between the injected SiH2Cl2 gas and N2O gas and supplying Cl group separated from DCS to the silicon substrate(1), (b) reinforcing the laminated oxide film by annealing the laminated oxide film after forming a desired thickness of oxide film(2) and injecting N2O gas only, (c) unloading the wafer from the tube by making the inside of tube atmospheric state with using N2 gas and building a good quality oxide film as forming the SixOyN2 boundary film(3).